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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2045 UHF power LDMOS transistor
Product specification Supersedes data of 2000 Feb 17 2003 Feb 27
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA - Output power = 30 W (PEP) - Gain = 12.5 dB - Efficiency = 32% - dim = -26 dBc * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (1800 to 2200 MHz) * Internally matched for ease of use. APPLICATIONS * RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range * Broadcast drivers. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 CAUTION PL (W) 30 (PEP) Gp (dB) >10 D (%) >30
3 2 Top view
MBK584
BLF2045
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
Fig.1 Simplified outline.
dim (dBc) -25
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 27
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature PARAMETER MIN. - - - -65 -
BLF2045
MAX. 65 15 4.5 +150 200
UNIT V V A C C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Thermal resistance is determined under specified RF operating conditions. PARAMETER CONDITIONS VALUE 2.1 UNIT K/W
thermal resistance from junction to heatsink Ptot = 87.5 W; Th = 25 C; note 1
2003 Feb 27
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 70 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 2.5 A VGS = VGSth + 9 V; ID = 2.5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 1.5 - 9 - - - - - - TYP. - - - - - 2 340 38 31 1.7
BLF2045
MAX. - 3.5 5 - 125 - - - - -
UNIT V V A A nA S m pF pF pF
102 handbook, halfpage C (pF)
MCD889
Coss Ciss
10
Crss 1
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz.
Fig.2
Input, output and feedback capacitance as functions of drain-source voltage, typical values.
2003 Feb 27
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2045
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.65 K/W, unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 IDQ (mA) 180 PL (W) 30 (PEP) Gp (dB) >10 D (%) >30 dim (dBc) -25
Ruggedness in class-AB operation The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz.
handbook, halfpage
20 Gp
MCD890
50 D (%) 40
(dB) 16 Gp 12 D
30
8
20
4
10
0 0 10 20 30 40 50 PL (PEP) (W)
0
Class-AB operation; VDS = 26 V; IDQ = 180 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.3
Power gain and efficiency as functions of peak envelope load power; typical values.
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Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2045
handbook, halfpage
0
MCD891
handbook, halfpage
0
MCD892
dim (dBc) -20 d3
d3 (dBc) -20
d5 -40 d7 -40
(1)
(3) (2)
-60 0 10 20 30 40 50 PL (PEP) (W)
-60 0 10 20 30 40 50 PL (PEP) (W)
VDS = 26 V; IDQ = 180 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 140 mA. (2) IDQ = 180 mA. (3) IDQ = 220 mA.
Fig.4
Intermodulation distortion as a function of peak envelope load power; typical values.
Fig.5
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
5
MCD893
zi ()
handbook, halfpage
6
MCD894
4
ZL () 4
2 3 xi 2 -2 1 ri 0 1.8 1.9 2 2.1 f (GHz) 2.2 -6 1.8 1.9 -4 0
RL
XL
2
2.1 f (GHz)
2.2
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th 25 C.
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th 25 C.
Fig.6
Input impedance as a function of frequency (series components); typical values.
Fig.7
Load impedance as a function of frequency (series components); typical values.
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Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2045
F1
handbook, full pagewidth
R2 R1 C6 L4 C1 L1 L2 C2 C3 L3 L5 L6 C4 L7 L8 L9 C5 L10 C11 C12 C13 C14 L1 2 C10 L14 C9 L16 50 output
Vdd C15 C16
Vgate
50 input
L11 L13 L15 C7 C8
MCD895
Fig.8 Class-AB test circuit for 2 GHz.
2003 Feb 27
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Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (see Figs 8 and 9) COMPONENT C2, C4, C7 and C8 C3 C1, C5, C9 and C10 C11 C12 C16 F1 L1 L2 L3 L4 and L12 L5 L6 L7 L8 L9 L10 L11 L13 L14 L15 L16 R1 and R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor; type 37281 VALUE 0.4 to 2.5 pF
BLF2045
DIMENSIONS CATALOGUE NO.
multilayer ceramic chip capacitor; note 1 2.4 pF multilayer ceramic chip capacitor; note 1 11 pF multilayer ceramic chip capacitor; note 2 1 nF multilayer ceramic chip capacitor electrolytic capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor 50 50 34.3 50 34.3 23.6 5.6 3.5 31.9 24.9 50 50 26.3 50 50 10 , 0.6 W 13 x 0.9 mm 2 x 0.9 mm 15 x 1.7 mm 37 x 0.9 mm 6 x 1.7 mm 13 x 2.9 mm 6 x 15.8 mm 6 x 26 mm 12 x 1.9 mm 7.4 x 2.7 mm 3 x 0.9 mm 4.15 x 0.9 mm 2.5 x 2.5 mm 2.8 x 0.9 mm 14 x 0.9 mm 2322 156 11009 100 nF 4.5 F; 50 V 100 F; 63 V 2222 037 58101 4330 030 36301 2222 581 16641
C6, C13, C14 and C15 tantalum SMD capacitor
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 6.15); thickness 0.64 mm.
2003 Feb 27
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Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2045
handbook, full pagewidth
50
50
60
PH98072 IN
PH98073 OUT
- C15 C6 + R1 C5 C16 R2 F1
C14
C13
C11
C12 C10
50 input
C1 C2 C3
C4 C7
C9 C8
50 output
PH98072 IN
PH98073 OUT
MCD896
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 6.15), thickness 0.64 mm. The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2 GHz class-AB test circuit.
2003 Feb 27
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF2045
SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
2003 Feb 27
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF2045
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Feb 27
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/05/pp12
Date of release: 2003
Feb 27
Document order number:
9397 750 10918

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